GaAs/AlGaAs nanowire photodetector.
نویسندگان
چکیده
We demonstrate an efficient core-shell GaAs/AlGaAs nanowire photodetector operating at room temperature. The design of this nanoscale detector is based on a type-I heterostructure combined with a metal-semiconductor-metal (MSM) radial architecture, in which built-in electric fields at the semiconductor heterointerface and at the metal/semiconductor Schottky contact promote photogenerated charge separation, enhancing photosensitivity. The spectral photoconductive response shows that the nanowire supports resonant optical modes in the near-infrared region, which lead to large photocurrent density in agreement with the predictions of electromagnetic and transport computational models. The single nanowire photodetector shows a remarkable peak photoresponsivity of 0.57 A/W, comparable to large-area planar GaAs photodetectors on the market, and a high detectivity of 7.2 × 10(10) cm·Hz(1/2)/W at λ = 855 nm. This is promising for the design of a new generation of highly sensitive single nanowire photodetectors by controlling the optical mode confinement, bandgap, density of states, and electrode engineering.
منابع مشابه
The Effect of Structural Parameters on the Electronic States and Oscillator Strength of a Resonant Tunneling Quantum Well Infrared Photodetector
In this paper a resonant tunnelling quantum well infrared photodetector (RT-QWIP) is discussed. Each period of this photodetector structure comprises of a resonant tunnelling structure (AlAs/AlGaAs/AlAs) nearby a quantum well (AlGaAs/GaAs). In this photodetector, photocurrent is produced when an electron makes a transition from the ground state of the well to an excited state which is coupled t...
متن کاملDesign and Room-Temperature Operation of GaAs/AlGaAs Multiple Quantum Well Nanowire Lasers.
We present the design and room-temperature lasing characteristics of single nanowires containing coaxial GaAs/AlGaAs multiple quantum well (MQW) active regions. The TE01 mode, which has a doughnut-shaped intensity profile and is polarized predominantly in-plane to the MQWs, is predicted to lase in these nanowire heterostructures and is thus chosen for the cavity design. Through gain and loss ca...
متن کاملBoundary conditions in characterizing InxGa1-xAs /GaAs quantum well infrared photodetector
We study the optical transition between bound-to-continuum states in InGaAs/GaAs quantum well infrared photodetector (QWIP) by analyzing two possible boundary conditions for the continuum states. InGaAs/GaAs QWIP differs from the GaAs/AlGaAs QWIP in many aspects. Comparing running wave function and Bloch wave function with experimental results, we find that Bloch wave function is the much more ...
متن کاملElectron mobilities approaching bulk limits in "surface-free" GaAs nanowires.
Achieving bulk-like charge carrier mobilities in semiconductor nanowires is a major challenge facing the development of nanowire-based electronic devices. Here we demonstrate that engineering the GaAs nanowire surface by overcoating with optimized AlGaAs shells is an effective means of obtaining exceptionally high carrier mobilities and lifetimes. We performed measurements of GaAs/AlGaAs core-s...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- Nano letters
دوره 14 5 شماره
صفحات -
تاریخ انتشار 2014